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FMMV2109 - SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES

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Part number FMMV2109
Manufacturer ETC
File Size 48.24 KB
Description SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES
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Full PDF Text Transcription

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SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 – JANUARY 1996 PIN CONFIGURATION  7 PARTMARKING DETAILS SEE TUNING CHARACTERISTICS FMMV2101 to FMMV2109 1 3 2 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Reverse Voltage Forward Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VR IF Ptot Tj:Tstg VALUE 30 200 330 -55 to +150 UNIT V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance SYMBOL VBR IR LS 3.0 280 0.15 400 MIN. 30 20 TYP. MAX. UNIT V nA nH ppm/ °C pF CONDITIONS. IR = 10µA VR = 25V f=250MHz Lead length≈1.5mm VR = 4V, f=1MHz Lead length≈1.5mm f=1MHz Diode Capacitance TCC Temperature Coefficient Case Capacitance CC TUNING CHARACTERISTICS (at Tamb = 25°C).
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