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FXT605 - NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Key Features

  • 120 Volt VCEO.
  • Gain of 2K at IC=1 Amp.
  • Ptot= 1 Watt.

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Datasheet Details

Part number FXT605
Manufacturer Unknown Manufacturer
File Size 29.55 KB
Description NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
Datasheet download datasheet FXT605 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 120 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX605 FOR GRAPHS FXT605 B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 140 120 10 0.01 10 0.1 10 1.0 1.5 1.8 1.7 2000 5000 2000 500 150 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. E-Line TO92 Compatible VALUE 140 120 10 4 1 1 -55 to +200 UNIT CONDITIONS.