G20N120 Datasheet | Unknown Manufacturer

Semiconductor HGTG20N120E2 April 1995 34A, 1200V N-Channel IGBT Features - 34A, 1200V - Latch Free Operation - Typical Fall Time - 780ns - High Input Impedance - Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls,...