G5S12020PMT
G5S12020PMT is Silicon Carbide Schottky Diode manufactured by Unknown Manufacturer.
Silicon Carbide Schottky Diode
Features
- Zero reverse recovery current
- Zero forward recovery voltage
- Temperature independent switching behavior
- High temperature operation
- High frequency operation
Benefits
- Unipolar rectifier
- Substantially reduced switching losses
- No thermal run-away with parallel devices
- Reduced heat sink requirements
Applications
- SMPS, PFC
- Solar application, UPS, EV/HEV
- Motor drives, Wind turbine, Rail traction
VRRM IF (TC = 149°C)
Qc
1200V 20A 80n C
TO-247AC
Inner Circuit
G = GPT 5 = Gen5 S = Si C Schottky Diode 120 = Voltage Rating 1200V 20 = Current Rating 20A PMT = TO-247AC DDDDDD = Traceable Code
Rev. B.1 2023 Page 1 of 7
Maximum Ratings (at TJ = 25 °C, unless otherwise specified)
Parameter
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
Continuous Forward Current TC = 25°C TC = 135°C TC = 149°C
Repetitive Peak Forward Surge Current TC = 25°C, tp = 10ms, Half Sine Pulse
Non-Repetitive Forward Surge Current TC = 25°C, tp = 10ms, Half Sine Pulse i2t Value TC = 25°C, tp = 10ms, Half Sine...
