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G5S12020PMT - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Zero reverse recovery current.
  • Zero forward recovery voltage.
  • Temperature independent switching behavior.
  • High temperature operation.
  • High frequency operation Benefits.
  • Unipolar rectifier.
  • Substantially reduced switching losses.
  • No thermal run-away with parallel devices.
  • Reduced heat sink requirements.

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Datasheet preview – G5S12020PMT

Datasheet Details

Part number G5S12020PMT
Manufacturer ETC
File Size 799.83 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet G5S12020PMT Datasheet
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    Full PDF Text Transcription

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    G5S12020PMT Silicon Carbide Schottky Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • SMPS, PFC • Solar application, UPS, EV/HEV • Motor drives, Wind turbine, Rail traction VRRM IF (TC = 149°C) Qc 1200V 20A 80nC TO-247AC Inner Circuit G = GPT 5 = Gen5 S = SiC Schottky Diode 120 = Voltage Rating 1200V 20 = Current Rating 20A PMT = TO-247AC DDDDDD = Traceable Code Rev. B.
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