G5S12020PMT - Silicon Carbide Schottky Diode

Key Features

Zero reverse recovery current.
Zero forward recovery voltage.
Temperature independent switching behavior.
High temperature operation.
High frequency operation Benefits.
Unipolar rectifier.
Substantially reduced switching losses.
No thermal run-away with parallel devices.
Reduced heat sink requirements.

G5S12020PMT silicon carbide schottky diode by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	G5S12020PMT
Manufacturer	Unknown Manufacturer
File Size	799.83 KB
Description	Silicon Carbide Schottky Diode
Datasheet	G5S12020PMT Datasheet

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G5S12020PMT Silicon Carbide Schottky Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • SMPS, PFC • Solar application, UPS, EV/HEV • Motor drives, Wind turbine, Rail traction VRRM IF (TC = 149°C) Qc 1200V 20A 80nC TO-247AC Inner Circuit G = GPT 5 = Gen5 S = SiC Schottky Diode 120 = Voltage Rating 1200V 20 = Current Rating 20A PMT = TO-247AC DDDDDD = Traceable Code Rev. B.