GFP5N60 - N-Channel enhancement mode power field effect Transistors

General Description

These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology.

GFP5N60 n-channel enhancement mode power field effect transistors by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	GFP5N60
Manufacturer	Unknown Manufacturer
File Size	122.72 KB
Description	N-Channel enhancement mode power field effect Transistors
Datasheet	GFP5N60 Datasheet

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GFP5N60 General Description() These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60N，DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suited for high efficiency switch mode power supply. GFP5N60、，。 TO-220 1.Gate 2.Drain 3.Source Absolute Maximum ratings（，，T=25 ℃ ） Characteristics（） (） Symbol（） BVDSS ID VGS EAS PD TSTG RθJC VSD Value(） 600 5 + 30 300 120 -55 ~150 1.18 1.4 Units() V A V mJ W ℃ ℃/ W V Characteristics Symbol (） VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min. () 2.