Datasheet Summary
General Description(概述)
These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60是增强型N沟道功率场效应管，采用平面条形DMOS 工艺生产制造。 This advanced technology has been especially tailored to minimize on
- state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and mutaion mode .These devices are well suited for high efficiency switch mode power supply. GFP5N60具有低导通电阻、优越的开关特性以及抗雪崩击穿 能力，适合用于高效开关电源。
TO-220
1.Gate 2.Drain...