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GFP5N60
General Description()
These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60N，DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suited for high efficiency switch mode power supply. GFP5N60、 ，。
TO-220
1.Gate 2.Drain 3.Source
Absolute Maximum ratings（，，T=25 ℃ ）
Characteristics（）
(）
Symbol（）
BVDSS ID VGS EAS PD TSTG RθJC VSD
Value(）
600 5 + 30 300 120 -55 ~150 1.18 1.4
Units()
V A V mJ W ℃ ℃/ W V
Characteristics
Symbol (）
VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Min. ()
2.
GFP5N60 Datasheet
