Datasheet Summary
General Description(概述)
These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP8N60是增强型N沟道功率场效应管，采用平面条形DMOS 工艺生产制造。 This advanced technology has been especially tailored to minimize on
- state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and mutaion mode .These devices are well suited for high efficiency switch mode power supply，electronic lamp ballasts based on half bridge topology. GFP8N60具有低导通电阻、优越的开关特性以及抗雪崩击穿 能力，适合用于高效开关电源、电子镇流器等。
TO-220 1.Gate 2.Drain...