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GFP8N60
General Description()
These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP8N60N，DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suited for high efficiency switch mode power supply，electronic lamp ballasts based on half bridge topology. GFP8N60、 ，、。
TO-220 1.Gate 2.Drain 3.Source
Absolute Maximum ratings（，，T=25 ℃ ）
Characteristics（） (）
Symbol（） BVDSS ID VGS EAS PD TSTG RθJC VSD
Value(） 600 7.5 + 30 230 147
-55 ~150 0.85 1.
GFP8N60 Datasheet
