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GLT5160L16 - 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM

General Description

The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory.

The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and WORD WRITE access cycles via two WE pins.

The GLT41316 has symmetric address and accepts 256-cycle refresh in 4ms interval.

Key Features

  • : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,.

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Datasheet Details

Part number GLT5160L16
Manufacturer Unknown Manufacturer
File Size 1.46 MB
Description 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
Datasheet download datasheet GLT5160L16 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh, Description : The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and WORD WRITE access cycles via two WE pins. The GLT41316 has symmetric address and accepts 256-cycle refresh in 4ms interval. All inputs are TTL compatible. Fast Page Mode operation allows random access up to 256x16 bits, within a page, with cycle times as short as 18ns. The GLT41316 is best suited for graphics, and DSP applications requiring high performance memories.