Datasheet4U Logo Datasheet4U.com

HCT7000 - N-Channel Enhancement Mode MOS Transistor

Description

The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package.

Electrical characteristics are similar to those of the JEDEC 2N7000.

Features

  • 200mA ID.
  • Ultra small surface mount package.
  • RDS(ON) < 5Ω.
  • Pin-out compatible with most SOT23.

📥 Download Datasheet

Datasheet preview – HCT7000

Datasheet Details

Part number HCT7000
Manufacturer ETC
File Size 241.57 KB
Description N-Channel Enhancement Mode MOS Transistor
Datasheet download datasheet HCT7000 Datasheet
Additional preview pages of the HCT7000 datasheet.

📁 Similar Datasheet

  • HCT70000MTX - N-Channel Enhancement Mode MOS Transistor (TT)
  • HCT7000M - N-Channel Enhancement Mode MOS Transistor (OPTEK)
  • HCT7000M - N-Channel Enhancement Mode MOS Transistor (TT)
  • HCT7000MTX - N-Channel Enhancement Mode MOS Transistor (OPTEK)
  • HCT7000MTXV - N-Channel Enhancement Mode MOS Transistor (OPTEK)
  • HCT7000MTXV - N-Channel Enhancement Mode MOS Transistor (TT)
  • HCT700 - COMPLEMENTARY SWITCHING TRANSISTORS (Seme LAB)
  • HCT70R1K1 - 700V N-Channel Super Junction MOSFET (SemiHow)
  • HCT70R1K6 - 700V N-Channel Super Junction MOSFET (SemiHow)
  • HCT-1-152-15L - Self Leaded Power Inductors (Coilcraft)
Other Datasheets by ETC

    Full PDF Text Transcription

    Click to expand full text
    Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features • 200mA ID • Ultra small surface mount package • RDS(ON) < 5Ω • Pin-out compatible with most SOT23 MOSFETS Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Power Dissipation (TA = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Power Dissipation (TS(1) = 25o C) . . . . . . . . . . . . . . . . . .
    Published: |