HF10N60 Datasheet | Unknown Manufacturer

Features - - - - - RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 28n C) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol - 2. Drain ◀ 1. Gate ▲ - - 3. Source General Description This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage (- Drain current limited by junction temperature) Parameter Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Value 620 10 5 30 Units V A A A V m J m J V/ns W W/°C °C °C ±30 420 14.7 4.5 60 0.38 - 55 ~ 150 300 Thermal Characteristics Value Symbol RθJC RθJA Parameter Min. Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient - Units Typ. - Max. 2.6 62.5 °C/W °C/W PDF 文件使用 "pdf Factory" 试用版本创建...