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HF10N60 - N-Channel MOSFET

General Description

This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol.
  • 2. Drain ◀ 1. Gate ▲.
  • 3. Source General.

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Datasheet Details

Part number HF10N60
Manufacturer Unknown Manufacturer
File Size 265.12 KB
Description N-Channel MOSFET
Datasheet download datasheet HF10N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HF10N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ● 2. Drain ◀ 1. Gate ▲ ● ● 3. Source General Description This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.