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C-MOS 16 M (4,194,304 x 4)-BIT DYNAMIC RAM
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at I/O1 .D w I/O2
aS
1 2 3
e e h
U 4 t
m o .c
HM51W16400BS6 (1/2) IL08
9
VDD (+3.3 V)
GND 26 25 I/O4 I/O 24 I/O3 I/O 23 CAS IN 22 OE IN 21 A9 IN
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 RAS CAS WE OE 5 23 4 22 I/O1 I/O2 I/O3 I/O4 2 3 24 25
10 11 12 15 16 17
I/O
I/O
WE IN 4 RAS IN 5
A11 IN 6
18 19 21 8 6
A10 IN 8 A0 IN 9 A1 IN 10 A2 IN 11 A3 IN 12 13 VDD (+3.3 V)
19 A8 IN 18 A7 IN 17 A6 IN 16 A5 IN
INPUT A0 - A11
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GND 14
15 A4 IN
S a
e h
CAS OE RAS WE
U 4 t e
: : : : :
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m o
ADDRESS COLUMN ADDRESS STROBE OUTPUT ENABLE ROW ADDRESS STROBE READ/WRITE ENABLE
INPUT/OUTPUT I/O1 - I/O4 : DATA
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HM51W16400BS6 Datasheet
