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HN20N03 - N-Channel Enhancement Mode Power MOSFET

General Description

The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = 30V,ID = 20A.
  • High density cell design for ultra low RDS(on).
  • Excellent package for good heat dissipation SOT-89 Maximum Ratings (Tc = 25℃ unless otherwise noted.
  • ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current Power Dissipation Tc=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range.
  • Dran current limited by maximum junction temperature. Symbol VDSS VGSS ID IDM PD TJ,Tstg.

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Datasheet Details

Part number HN20N03
Manufacturer Unknown Manufacturer
File Size 532.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HN20N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HN20N03 N-Channel Enhancement Mode Power MOSFET Description The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application ● ● ● General Features ● VDS = 30V,ID = 20A ● High density cell design for ultra low RDS(on) ● Excellent package for good heat dissipation SOT-89 Maximum Ratings (Tc = 25℃ unless otherwise noted*) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current Power Dissipation Tc=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range * Dran current limited by maximum junction temperature.