HN20N03 Description
The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
HN20N03 Key Features
- VDS = 30V,ID = 20A
- High density cell design for ultra low RDS(on)
- Excellent package for good heat dissipation
- Dran current limited by maximum junction temperature
- ±100 nA
- td(on)
- tr td(off)