Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Application
- -
- General Features
- VDS = 30V,ID = 20A
- High density cell design for ultra low RDS(on)
- Excellent package for good heat dissipation
SOT-89
Maximum Ratings (Tc = 25℃ unless otherwise noted- )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃ Tc=100℃
Pulsed Drain Current
Power Dissipation
Tc=25℃ Derate above 25℃
Operating Junction and Storage...