HN20N03 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Unknown Manufacturer

Overview: HN20N03 N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number	HN20N03
Manufacturer	Unknown Manufacturer
File Size	532.63 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HN20N03-ETC.pdf

The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Application ● ● ● General

VDS = 30V,ID = 20A.
High density cell design for ultra low RDS(on).
Excellent package for good heat dissipation SOT-89 Maximum Ratings (Tc = 25℃ unless otherwise noted.
) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current Power Dissipation Tc=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range.
Dran current limited by maximum junction temperature. Symbol VDSS VGSS ID IDM PD TJ,Tstg.