Datasheet Summary
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Preliminary Specification
IM29LV001T and IM29LV001B 1 M Bit (128K x 8) 3.3V-Only Flash Memory
Features
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- 0.40 µm, triple-poly double-metal CMOS process Single power supply operation 3.3V ± 10% for both read and write High endurance > 10,000 program/erase cycles Fast read access time 70 and 90 ns Single page erasability for optimal data alterability Page size: 512 bytes Hardwired data protection Inhibits program and erase operations of the top (IM29LV001T) or bottom (IM29LV001B) 32 pages of the array for false write and virus prevention. Flexible boot block configurability Fast program and erase operations: Byte program : < 35 µsec typical Page erase : <...