• Part: IRF4N60
  • Description: POWER MOSFET
  • Manufacturer: Unknown Manufacturer
  • Size: 176.70 KB
Download IRF4N60 Datasheet PDF
IRF4N60 page 2
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Datasheet Summary

POWER MOSFET GENERAL DESCRIPTION Features This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. ‹ ‹ ‹ ‹ ‹ ‹ Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220/TO-220FP Top View SYMBOL GATE DRAIN SOURCE 12 3 N-Channel...