IXFH12N90
Features
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect Fast intrinsic Rectifier l l l l l l
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 V V n A m A m A W W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 m A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
- ID25 TJ = 25°C TJ = 125°C
4.5 ±100 25 1 1.1 0.9 0.8
Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays l l l l l l l l
10N90 12N90 13N90 Pulse test, t £ 300 ms, duty cycle d £ 2 %
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l l l
IXYS reserves the right to change...
