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JY21L - High and Low side driver

Description

The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process.

The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V.

Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.

Features

  • 3.3V logic compatible.
  • Fully operational to +150V.
  • Floating channel designed for bootstrap operation.
  • Gate drive supply range from 5.5V to 20V.
  • Output Source/Sink current capability 450mA/850mA.
  • Independent Logic input to accommodate all topologies.
  • -5V negative Vs ability.
  • Matched propagation delay for both channels.

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Datasheet Details

Part number JY21L
Manufacturer ETC
File Size 630.85 KB
Description High and Low side driver
Datasheet download datasheet JY21L Datasheet
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High and Low side driver JY21L General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify use in high frequency applications. Features ● 3.3V logic compatible ● Fully operational to +150V ● Floating channel designed for bootstrap operation ● Gate drive supply range from 5.
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