• Part: K1611
  • Description: N-Channel MOSFET Transistor
  • Category: MOSFET
  • Manufacturer: Unknown Manufacturer
  • Size: 69.82 KB
Download K1611 Datasheet PDF
Unknown Manufacturer
K1611
Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS- PD Tch Tstg Ratings 800 ±30 ±3 ±6 20 50 2 150 - 55 to +150 Unit V V A A m J 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip 0.5 +0.2 - 0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 Avalanche energy capacity .. Allowable power TC = 25°C dissipation Channel temperature Storage temperature - Ta = 25°C W °C °C 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) Single pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source...