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K2129 - 2SK2129

Datasheet Summary

Features

  • q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s.

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Datasheet Details

Part number K2129
Manufacturer ETC
File Size 72.95 KB
Description 2SK2129
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Full PDF Text Transcription

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Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor www.DataSheet4U.com q Control equipment q Switching power supply 15.0±0.3 3.0±0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.
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