KM416S1120D - 512K x 16bit x 2 Banks Synchronous DRAM LVTTL

Product Overview

Datasheet Details

Part number	KM416S1120D
Manufacturer	ETC
File Size	1.10 MB
Description	512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Datasheet	KM416S1120D Datasheet
Additional preview pages of the KM416S1120D datasheet.

Product details

Description

The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (2K/32ms) CMOS SDRAM.

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Other Datasheets by ETC

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Published: Apr 4, 2005 |