KP2000A Datasheet | Unknown Manufacturer

Features : . All Diffused Structure . Spoke Amplifying Gate Configuration . High d V/dt Capability . Pressure Assembled Device CASE 5T ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM d V/dt (4) 10 m A 200 m A (3) 1000 V/µsec Notes: All ratings are specified for Tj=25 o C unless otherwise stated. (1) All voltage ratings are specified for an applied 50Hz/60z Hz sinusoidal waveform over the temperature range -40 to +125 o C. (2) 10 msec. max. pulse width (3) Maximum value for Tj = 125 o C. (4) Minimum value for linear and exponential waveshape to 70% rated VDRM. Gate open. Tj = 125 o C. (5) Non-repetitive value. Conducting - on state Parameter Average value of on-state current RMS value of on-state current Peak one cpstcle surge (non repetitive) current Symbol IT(AV) ITRMS ITSM Min. Max. 2000 4000 40000 36000 Typ. Units A A A A A2s m A Conditions Sinewave,180o conduction,Tc=70o C Nominal value 8.3 msec (60Hz), sinusoidal waveshape, 180o conduction, Tj = 125 o C 10.0 msec (50Hz), sinusoidal waveshape, 180o conduction, Tj = 125 o C 8.3 msec and 10.0 msec VD = 24 V; RL= 12 ohms VD = 24 V; I = 2.5 A ITM = 5000 A Switching from VDRM ≤ 800 V, non-repetitive Switching from VDRM ≤ 800 V I square t Latching current Holding current Peak on-state voltage Critical rate of rise of on-state current (5) Critical rate of rise of on-state current I2t IL 10x106 1500 IH VTM di/dt 300 di/dt 100 250 2.40 m A V A/µs A/µs KP2000A/5000V Gating Parameter Peak gate power dissipation Average gate power dissipation Peak gate current Gate current Gate voltage Symbol PGM PG(AV) IGM IGT VGT 0.30 Min. Max. 200 5 20 300 3.5 Typ. Units W W A m A V Conditions tp = 40 us Dynamic Parameter Delay time...