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LSCP10C60 Datasheet Silicon Controlled Rectifiers

Manufacturer: Unknown Manufacturer

Datasheet Details

Part number LSCP10C60
Manufacturer Unknown Manufacturer
File Size 639.18 KB
Description Silicon Controlled Rectifiers
Download LSCP10C60 Download (PDF)

General Description

Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.

Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 Half Sine Wave : TC = 111 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 6.4 10 110 60 50 5 0.5 2 5.0 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Units V A A A A2 s A/㎲ W W A V °C °C Aug, 2003.

Rev.

Overview

SemiWell Semiconductor SCP10C60 Symbol 3.

Gate ○ ○ Silicon Controlled Rectifiers ▼ 1.

Key Features

  • Repetitive Peak Off-State Voltage : 600V.
  • R. M. S On-State Current ( IT(RMS)= 10 A ).
  • Low On-State Voltage (1.4V(Typ. )@ ITM).
  • Non-isolated Type.
  • ○ 2. Anode 1. Cathode TO-220 General.