GENERAL DESCRIPTION
: 40 V 2 A (Low Ir) ELECTRICAL CHARACTERISTICS
SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage @ 2 Amperes, Ta=25°C VF MAX Maximum Instantaneous Reverse Voltage VR= 40 Volt, Ta=25°C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS
Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures TYPE: MBR240 Single Anode Spec. Limit 40 2 0.55 0.48 Die Sort UNIT 42.5 Volt Amp Volt IR MAX Cj MAX IFSM Tj TSTG 0.1 0.08 mA pF 60 -65 to +150 -65 to +150 Amp °C °C Specification apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING DIM A B C D ITEM Die Size Top Metal Pad Size Passivation Seal Thickness (Min) Thickness (Max) um2 1245 1025 1203 254 305 Mil2 49.01 40.3 41.1 10 12 A C B Top-side M...