MID100-12A3 - IGBT Modules

Key Features

NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W °C °C V~ V~ Nm lb. in. Nm lb. in. mm mm m/s2 g oz. Typical.

MID100-12A3 igbt modules by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	MID100-12A3
Manufacturer	Unknown Manufacturer
File Size	118.44 KB
Description	IGBT Modules
Datasheet	MID100-12A3 Datasheet

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Full PDF Text Transcription (Reference)

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MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 135 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 15 W, non repetitive VGE = ±15 V, TJ = 125°C, RG = 15 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 135 90 180 10 ICM = 150 VCEK < VCES 560 150 -40 ...