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MID100-12A3 Datasheet IGBT Modules

Manufacturer: Unknown Manufacturer

Overview: MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 135 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 15 W, non repetitive VGE = ±15 V, TJ = 125°C, RG = 15 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 135 90 180 10 ICM = 150 VCEK < VCES 560 150 -40 ...

Datasheet Details

Part number MID100-12A3
Manufacturer Unknown Manufacturer
File Size 118.44 KB
Description IGBT Modules
Datasheet MID100-12A3-ETC.pdf

Key Features

  • NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W °C °C V~ V~ Nm lb. in. Nm lb. in. mm mm m/s2 g oz. Typical.

MID100-12A3 Distributor