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MOS FET MKV670
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ±30 ±70 ±140 Unit V V A A W
Electrical Characteristics
Symbol Test Conditions min Ratings typ max ±10 100 4.0
(Ta=25ºC) Unit
External Dimensions
1.8 5.0±0.2 15.6±0.4 13.6 9.6 4.8±0.2 2.0±0.1
130 (Tc=25ºC) 400 mJ ºC 150 ºC –40 to +150 1 PW 100 µs, duty 1% 2 VDD=20V, L=10mH, I L=7.5A, unclamped, RG=50Ω
V (BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a)
ID =100µA, VGS =0V VGS = ±20V VDS =60V, VGS =0V VDS =10V, ID =250µA VDS =10V, ID =35A VGS =10V, ID =35A VDS =10V f =1.0MHz VGS =0V ID =20A VDD 20V RG =22Ω VGS =10V ISD =50A, VGS =0V ISD =25A, d i /d t=50A/µs
60
2.0 30
3.0 5.5 4500 2200 1030 100 200 250 150 0.
MKV670 Datasheet
