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NE650103M - NECS 10 W L & S-BAND POWER GaAs MESFET

General Description

NEC's NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications.

It is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity.

Key Features

  • LOW COST.

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Datasheet Details

Part number NE650103M
Manufacturer Unknown Manufacturer
File Size 135.74 KB
Description NECS 10 W L & S-BAND POWER GaAs MESFET
Datasheet download datasheet NE650103M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • HIGH OUTPUT POWER: 40 dBm TYP • HIGH POWER ADDED EFFICIENCY: 45 % TYP at 2.3 GHz • LOW THERMAL RESISTANCE: 4.0° C/W • LEAD-FREE 2-φ 3.3 ± 0.3 GATE 13.8 ± 0.35 4.2 ± 0.4 5.84 ± 0.2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 3M 20.32 ± 0.15 14.27 ± 0.15 3.5 ± 0.2 DESCRIPTION NEC's NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications. It is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures DRAIN 8.54 ± 0.2 2.04 ± 0.3 0.15 ± 0.