NT512D64S8HB0G Overview
Description
NT512D64S8HB0G, NT512D64S8HB1G, NT512D64S8HB1GY, NT512D72S8PB0G, NT256D64SH88B0G, NT256D64SH88B1G, NT256D64SH88B1GY, NT256D72S89B0G and NT128D64SH4B1G are unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Modules (DIMM). NT512D64S8HB1GY and NT256D64SH88B1GY are packaged using lead free technology.
Key Features
- 184 Dual In-Line Memory Module (DIMM)
- Unbuffered DDR DIMM based on 256M bit die B device, organized as either 32Mbx8 or 16Mbx16
- DRAM DLL aligns DQ and DQS transitions with clock transitions
- Address and control signals are fully synchronous to positive clock edge
- Programmable Operation
- DIMM CAS Latency: 2, 2.5, 3 - Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8 - Operation: Burst Read and Write
- Auto Refresh (CBR) and Self Refresh Modes
- Automatic and controlled precharge commands
- 7.8 µs Max. Average Periodic Refresh Interval
