NTMS10P02R2 - P-Channel MOSFET

Key Features

s.
VDS (V) =-20V.
ID =-10 A (VGS =-10V).
RDS(ON) ＜ 14 mΩ (VGS =-4.5V).
RDS(ON) ＜ 20mΩ (VGS =-2.5V).
Diode Exhibits High Speed, Soft Recovery.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Maximum Operating Drain Current Pulsed Drain Current (Note.1) Power Dissipation Ta = 25℃ Maximum Operating Power Dissipation Avalanche Energy (Note.2) TJ = 25°C Thermal Resistance. Juncti.

NTMS10P02R2 p-channel mosfet by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	NTMS10P02R2
Manufacturer	Unknown Manufacturer
File Size	1.68 MB
Description	P-Channel MOSFET
Datasheet	NTMS10P02R2 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NTMS10P02R2	Power MOSFET	On Semiconductor
NTMS3P03R2	P-Channel Power MOSFET	ON Semiconductor
NTMS4101PR2G	P-Channel 20V MOSFET	VBsemi
NTMS4107N	Power MOSFET	ON Semiconductor
NTMS4117N	Power MOSFET	ON Semiconductor

Other Datasheets by Unknown Manufacturer

Part Number	Description
NTM164M21	LCD
NTM164M21C	LCD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

+0.040.21 -0.02 SOP-8 NTMS10P02R2 P-Channel MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain D G S ■ Features ● VDS (V) =-20V ● ID =-10 A (VGS =-10V) ● RDS(ON) ＜ 14 mΩ (VGS =-4.5V) ● RDS(ON) ＜ 20mΩ (VGS =-2.5V) ● Diode Exhibits High Speed, Soft Recovery ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Maximum Operating Drain Current Pulsed Drain Current (Note.1) Power Dissipation Ta = 25℃ Maximum Operating Power Dissipation Avalanche Energy (Note.2) TJ = 25°C Thermal Resistance.