ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Recommended Operating Conditions Characteristics Functional DESCRIPTION
Memory Operation Testing Protected Matrix Shipment Test Functions Block Programming Read Reference Shifting Charge Pump Disable DESCRIPTION
of the IM Bus 2 NVM 3060 4096-Bit EEPROM 1. Introduction Electrically erasable programmable read-only memory (EEPROM) in N-channel floating-gate technology with a capacity of 512 words, 8 bits each. The stored information remains stored even with the supply voltages switched off. Reading and programming operations are executed via the IM bus (see section 5.). Input and output signals are TTL level. An address option input provides the possibility to operate two memories in parallel, to obtain a total storage capacity of 8192 bits. The device contains an on-chip charge pump for high programming voltage generation and an on-chip clock oscillator. Option 3 NVM 3060 Clock Charge Pump Clock Ident Data 5 6 IM Bus Interface 7 Data Output Buffer and Input Register EEPROM Matrix 512 x 8 2 S Reset 4 Sequence Control Decoder and Register for the Memory Address +5 V 1 8 GND VSUP Fig.
