Description
The OP294 and OP299 are gallium arsenide infrared emitting diodes designed for low current or power limited applications (such as battery supplies).
Features
- Characterized at 5mA for battery
operated systems or other low drive current systems.
- Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299).
- Significantly higher power output than GaAs at equivalent drive currents.
- Wavelength matched to silicon’ s peak response.
- T-1 3/4 package
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Reverse Voltage.
- .
OP294 Datasheet
