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P06P03LDG - P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number P06P03LDG
Manufacturer Unknown Manufacturer
File Size 274.48 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet P06P03LDG Datasheet

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NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P06P03LDG TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 45m ID -12A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±20 -12 -10 -30 48 20 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 °C UNITS °C / W °C / W SYMBOL RθJc RθJA TYPICAL MAXIMUM 3 75 Pulse width limited by maximum junction temperature.