P12N60
Description
The IGBT is a MOS gated high voltage switching device bining the best features of MOSFETs and bipolar transistors.
Key Features
- Latch Free Operation
- Typical Fall Time <500ns
- High Input Impedance
- Low Conduction Loss
- Part: P12N60
- Description: HGTP12N60
- Manufacturer: Unknown Manufacturer
- Size: 67.03 KB