PFB6000 Datasheet | Unknown Manufacturer

FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL Front View GATE SOURCE DRAIN 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current ¡Ð ¡Ð ¡Ð Continuous Tc = 25¢J , VGS@10V Continuous Tc = 100¢J , VGS@10V Pulsed Tc = 25¢J , VGS@10V (Note 2) Continue Symbol VDSS ID ID IDM VGS PD dv/dt TJ, TSTG EAS TL TPKG IAS Value 60 60 43 241 ±20 150 1.0 4.5 -55 to 175 500 300 260 60 V W W/¢J V/ns ¢J m J ¢J ¢J A Unit V A Gate-to-Source Voltage ¡Ð Total Power Dissipation Derating Factor above 25¢J Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144£g H,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating THERMAL RESISTANCE Symbol RθJC RθJA Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.0 62 Units ¢J /W ¢J /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175¢J 1 cubic foot chamber, free air 2004/03/04 Page 1 PFB6000 N-CHANNEL TRENCH MOSFET ORDERING INFORMATION Part Number PFB6000 Package TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25¢J . CMP60N03LD13 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 £g A) Breakdown Voltage Temperature Coefficient (Reference to 25¢J , ID = 250 £g A) Drain-to-Source Leakage Current (VDS = 60 V, VGS = 0 V, TJ = 25¢J ) (VDS = 48 V, VGS = 0 V, TJ = 150¢J ) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 £g A) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 60A) Forward Transconductance (VDS = 15 V, ID = 60A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge Gate-to-Drain...