RF142 Datasheet Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications

Manufacturer: Unknown Manufacturer

RF142 heterojunction bipolar transistor power amplifier dual-band controller for gsm and pcs applications by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	RF142
Manufacturer	Unknown Manufacturer
File Size	456.62 KB
Description	Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications
Download	RF142 Download (PDF)

General Description

s are specified in Table 1.

An RF142 block diagram is shown in Figure 2.

Overview

RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications® (GSM®) and other Time Division Multiple Access (TDMA) applications.

The control current output from the RF142 can be used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA.

The device consists of two sections: an RF detector, and a gain controller.

Key Features

RF PA controller for use with HBT PAs.
50 dB detector dynamic range.
Broadband, logarithmic power detector (800 MHz to 2000 MHz).
Logarithmic RF power detector requires no external diodes.
Integrator and gain shaping block enhance loop stability and linearity.
Three-cell battery operation (2.7 V to 5.0 V).
Standby mode with 20 µA of current consumption.
20-pin Thin Shrink Small Outline Package (TSSOP).

More Datasheets from Unknown Manufacturer

Part Number	Description