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RF142 - Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications

Datasheet Summary

Description

are specified in Table 1.

An RF142 block diagram is shown in Figure 2.

Features

  • RF PA controller for use with HBT PAs.
  • 50 dB detector dynamic range.
  • Broadband, logarithmic power detector (800 MHz to 2000 MHz).
  • Logarithmic RF power detector requires no external diodes.
  • Integrator and gain shaping block enhance loop stability and linearity.
  • Three-cell battery operation (2.7 V to 5.0 V).
  • Standby mode with 20 µA of current consumption.
  • 20-pin Thin Shrink Small Outline Package (TSSOP).

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Datasheet Details

Part number RF142
Manufacturer ETC
File Size 456.62 KB
Description Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications
Datasheet download datasheet RF142 Datasheet
Additional preview pages of the RF142 datasheet.

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    RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications® (GSM®) and other Time Division Multiple Access (TDMA) applications. The control current output from the RF142 can be used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA. The device consists of two sections: an RF detector, and a gain controller. The RF142, when combined with a PA and a coupler, forms a closed PA control loop, where the PA output power is controlled by a single analog reference voltage, typically supplied by the baseband.
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