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RX65T080PS3A - 650V GaN Power Transistor

Features

  • Easy to use, compatible with standard gate drivers.
  • Excellent QG x RDS(on) figure of merit (FOM).
  • Low QRR, no free-wheeling diode required.
  • Low switching loss.
  • RoHS compliant and Halogen-free.

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Datasheet preview – RX65T080PS3A

Datasheet Details

Part number RX65T080PS3A
Manufacturer ETC
File Size 267.44 KB
Description 650V GaN Power Transistor
Datasheet download datasheet RX65T080PS3A Datasheet
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Full PDF Text Transcription

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RX65T080PS3A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit (FOM) • Low QRR, no free-wheeling diode required • Low switching loss • RoHS compliant and Halogen-free Applications • High efficiency power supplies • Telecom and datacom • Automotive • Servo motors Product Summary VDSS 650 V RDS(on), typ 80 mΩ QG, typ 21 nC QRR, typ 26 nC Packaging Part Number RX65T080PS3A Package 3 Lead TO-220 Packaging Tube Base QTY 50 Maximum ratings, at TC=25 °C, unless otherwise specified Symbol Parameter Limit Value Unit Continuous drain current @TC=25°C ID Continuous drain current @TC=100°C 30 A 19 A Pulsed drain current @TC=25°C (pulse width: 10us) 125 A IDM Pulsed drain current @TC=150°C
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