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SD4953BDY - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

on-resistance and cost-effectiveness.

Key Features

  • Simple Drive Requirement.
  • Lower on-resistance BVDSS RDS(ON) - 30 V 42 mĪ©.
  • Fast Switching ID - 5 A Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Total Power Dissipation1 VDS VGS ID @TA=25ā„ƒ ID @TA=70ā„ƒ IDM PD @TA=25ā„ƒ Linear Derating Factor operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resistance Ju.

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Datasheet Details

Part number SD4953BDY
Manufacturer Unknown Manufacturer
File Size 247.29 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet SD4953BDY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET SD4953BDY Description The SD4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.