SHF-0289 Description
Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB pression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA.
SHF-0289 Key Features
- Patented GaAs Heterostructure FET
- +30dBm Output Power at 1dB pression
- +46dBm Output IP3
- High Drain Efficiency: Up to 40% at Class AB
- 13 dB Gain at 900MHz (Application circuit)
- 13 dB Gain at 1900MHz (Application circuit)