SLD432S
SLD432S is Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output manufactured by Unknown Manufacturer.
Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output
Did you know that ultrahigh power infrared laser diodes are used in welding equipment and the equipment used to trim photomasks? These ultrahigh power infrared laser diodes now have the high reliability to respond to the needs of this evolving industrial equipment. Sony continues to push the limits of increased power and improved reliability in the laser diodes that support these developments. Sony has now developed the SLD432S 40 W optical power output array laser diode that Features both high power and the ability to be used in a wide range of applications. s s s s Emission wavelength: 808 ±3 nm Rated optical power output: 40 W, CW operation High reliability Low operating current
Ultrahigh Power Laser Diode Array
The development of ultrahigh power laser diodes began with the single stripe type device. The one-dimensional linear array laser was developed to respond to needs for even higher power levels from ultrahigh power infrared laser diodes. This array laser diode concept is a technology that can be applied when the reliability and other characteristics of the single-stripe ultrahigh power laser diode technology have achieved a high level. The technology that allowed the SLD344YT and other single-stripe type laser diode products to achieve the 6 W output level became the technological foundation for the array laser diode.
High-Reliability Ultrahigh Power Laser Diode
The SLD432S of this release has a structure in which 33 emitters with 100 µm width are arranged in a one-dimensional linear array as shown in figure 2 to allow the device to achieve an optical power output of 40 W. (See figure 1 and table 1.) This device uses the same package as the 20 W SLD431S array laser diode, allowing user designs in which the laser device can be easily replaced. (See figure 3.) The buried current confinement structure was used in the device structure when developing this device, and thus...