SMOS21N50
SMOS21N50 is Power MOSFETs manufactured by Unknown Manufacturer.
SMOS21N50, SMOS26N50
Power MOSFETs
Dimensions TO-247AD
Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
(TAB)
C D E F G H
G=Gate, D=Drain, S=Source,TAB=Drain
J K L M N
Symbol VDSS VDGR VGS VGSM ID25 TJ=25o C to 150o C
Test Conditions
Maximum Ratings 500 500 ±20 ±30 21N50 26N50 21 26 84 104 21 26 30
Unit V
TJ=25o C to 150o C; RGS=1M Continuous Transient TC=25o C TC=25o C; pulse width limited by TJM TC=25o C TC=25o C IS TJ IDM; di/dt o
21N50 26N50
21N50 26N50
A m J V/ns
EAR dv/dt
100A/us; VDD
VDSS'
150 C; RG=2 300
-55...+150 150 -55...+150 o
PD TJ TJM Tstg TL Md Weight
TC=25o C
1.6mm(0.062 in.) from case for 10s Mounting torque
300 1.13/10 6 o
Nm/Ib.in. g
SMOS21N50, SMOS26N50
Power MOSFETs
(TJ=25o C, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS=0V; ID=250u A VDS=VGS; ID=4m A VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25o C VGS=0V; TJ=125o C Characteristic Values min. typ. max. 500 2 4 ±100 200 1 Unit V V n A u A m A
(TJ=25o C, unless otherwise specified) Symbol RDS(on) Test Conditions VGS=10V; ID=0.5ID25 21N50 26N50 Pulse test, t 300us, duty cycle 2% VDS=10V; ID=0.5ID25; pulse test VGS=0V; VDS=25V; f=1MHz Characteristic Values min. typ. max. 0.25 0.23 0.20 11 21 4200 450 135 135 160 28 40 62 85 16 25 33 45 65 80 30 40 0.42 0.25 Unit gts Cies Coes Cres Qg(on) Qgs Qgd td(on) tr td(off) tf Rth JC Rth...
