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SNA-586 - DC-5 GHz / Cascadable GaAs HBT MMIC Amplifier

Datasheet Summary

Description

Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.

A Darlington configuration is utilized for broadband performance up to 5 GHz.

The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

Features

  • High Output IP3: 32.5 dBm @ 850 MHz.
  • Cascadable 50 Ohm Gain Block.
  • Patented GaAs HBT Technology.
  • Operates From Single Supply 8 Frequency GHz 4 6.

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Datasheet preview – SNA-586

Datasheet Details

Part number SNA-586
Manufacturer ETC
File Size 351.93 KB
Description DC-5 GHz / Cascadable GaAs HBT MMIC Amplifier
Datasheet download datasheet SNA-586 Datasheet
Additional preview pages of the SNA-586 datasheet.

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Full PDF Text Transcription

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Product Description Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.5 dBm. These unconditionally stable amplifiers provide 18 dB of gain and 18.4 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation.
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