SQD200A60 Datasheet | Unknown Manufacturer

TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 200A, VCEX 400/600V Low saturation voltage for higher efficiency. High DC current gain h FE Isolated mounting base VEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 95max 62max Unit A Maximum Ratings Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass M5 Terminal M5 A.C.1minute Remended Value 1.5-2.5 15-25 Remended Value 1.5-2.5 15-25 Typical Value TC 25 =pw 1ms VBE 2V Conditions Tj 25 unless otherwise specified Ratings Unit V V V A A A W 150 125 V N m ( f B) g SQD200A40 SQD200A60 400 400 10 200 400 200 12 1250 40 to 40 to 2500 2.7 28 2.7 28 380 600 600 Electrical Characteristics Symbol ICBO IEBO VCEO VCEX Item Collector Cut-off Current Emitter Cut-off Current SQD200A40 Collector Emitter Sustaning Voltage SQD200A60 SQD200A40 SQD200A60 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) Ic 200A VCB VCBO VEB VEBO Ic 1A Ic 40A IB2 Conditions Ratings Min. Max. 2.0 800 300 450 400 600 75 100 2.0 2.5 2.0 12.0 3.0 1.4 0.1 0.3 Unit m A m A V V 8A h FE VCE(sat) VBE(sat) ton ts tf VECO Rth(j-c) Ic 200A VCE 2V Ic 200A VCE 5V Ic 200A IB 2.7A Ic 200A IB 2.7A Vcc 300V Ic 200A 4A IB1 4A IB2 V V s V /W Transistor part Diode part San Rex 50 Seaview Blvd. Port Washington, NY...