Datasheet4U Logo Datasheet4U.com

STS2320 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • ( m W ) Max ID 3.6A RDS(ON) Super high dense cell design for low RDS(ON). 45@ VGS = 4.5V 65@ VGS =2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S.

📥 Download Datasheet

Datasheet Details

Part number STS2320
Manufacturer Unknown Manufacturer
File Size 603.85 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STS2320 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STS2321 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STS2300 N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STS2300S N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STS2301 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STS2301 P-Channel 20V MOSFET VBsemi

Other Datasheets by Unknown Manufacturer

Part Number Description
STS2336A N-Channel Enhancement Mode Field Effect Transistor
STS4054 DC Constant current charging IC

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SamHop Microelectronics Corp. STS2320 Oct .29 2004 V1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES ( m W ) Max ID 3.6A RDS(ON) Super high dense cell design for low RDS(ON). 45@ VGS = 4.5V 65@ VGS =2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range a Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 10 3.6 14 1.25 1.