T2N4401
T2N4401 is Low Power Bipolar Transistors manufactured by Unknown Manufacturer.
Features
:
- NPN Silicon Planar Epitaxial Transistors.
- General purpose Switching Applications.
TO-92 Plastic Package
Dimensions A B C D E F G H K L
Minimum 4.32 4.45 3.18 0.41 0.35 5° 1.14 12.70 1.982
Maximum 5.33 5.20 4.19 0.55 0.50
1.40 1.53 2.082
Dimensions : Millimetres
Pin Configuration 1 = Emitter 2 = Base 3 = Collector
Page 1
10/04/06 V1.0
Low Power Bipolar Transistors
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Absolute Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient Rth Rth
(j-c) (j-a)
Symbol VCEO VCBO VEBO IC
T2N4401 40 60 6 600 625 5.0 1.5 12 -55 to +150
Unit
V m A m W m W/°C W W/°C °C
Tj, Tstg
83.3 °C/W 200
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Characteristic Collector Emitter Voltage IC = 1m A, IB = 0 Collector Base Voltage IC = 100µA, IE = 0 Emitter Base Voltage IE = 100µA, IC = 0 Base Cut off Current VCE = 35V, VEB = 0.4V Collector Cut off Current VCE = 35V, VEB = 0.4V Collector Emitter Saturation Voltage IC = 150m A, IB = 15m A IC = 500m A, IB = 50m A Base Emitter Saturation Voltage IC = 150m A, IB = 15m A IC = 500m A, IB = 50m A
- Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0% Symbol BVCEO- BVCBO BVEBO IBEV <0.1 ICEX <0.4 <0.75 V VBE (Sat)- 0.75
- 0.95 <1.2 µA T2N4401 >40 >60 >6 V Unit
VCE (Sat)-
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