Datasheet4U Logo Datasheet4U.com

TS08N02S - Single N-Channel Power MOSFET

General Description

SOP-8 APPLICATIONS: ͨʢʱ´ú LoadSwitch Ordering and Marking Information Product ID Marking Package Packaging TS08N02S SOP-8 Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) Maximum

📥 Download Datasheet

Datasheet Details

Part number TS08N02S
Manufacturer Unknown Manufacturer
File Size 832.63 KB
Description Single N-Channel Power MOSFET
Datasheet download datasheet TS08N02S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TS08N02S Single N-Channel Power MOSFET VDSS(V) 20 RDS (ON) 8mΩ(Typ)@VGS=4.5V 11.7mΩ(Typ)@VGS=2.5V ID(A) 12 FEATURE: • The TS08N02S is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. Pin Description SOP-8 APPLICATIONS: ͨʢʱ´ú •LoadSwitch Ordering and Marking Information Product ID Marking Package Packaging TS08N02S SOP-8 Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.