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TS08N02S
Single N-Channel Power MOSFET
VDSS(V) 20
RDS (ON)
8mΩ(Typ)@VGS=4.5V 11.7mΩ(Typ)@VGS=2.5V
ID(A)
12
FEATURE: • The TS08N02S is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
Pin Description SOP-8
APPLICATIONS:
ͨʢʱ´ú •LoadSwitch
Ordering and Marking Information
Product ID
Marking
Package
Packaging
TS08N02S
SOP-8
Tape&Reel
Absolute Maximum Ratings
Symbol
VDSS VGSS
ID
TJ
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current(VGS= -4.