Unknown Manufacturer TS08N02S
The TS08N02S is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.| Part No. | TS08N02S |
|---|---|
| Datasheet | TS08N02S Download |
| Manufacturer | Unknown Manufacturer |
| Description | Single N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
SOP-8APPLICATIONS
: ͨʢʱ´ú●LoadSwitch Ordering and Marking Information Product ID Marking Package Packaging TS08N02S SOP-8 Tape&Reel
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) Maximum Junction Temperature TA=25°C TA=70°C TSTG Storage Temperature Range IDM Pulsed Drain Current TA=25°C PD Maximum Power Dissipation TA=70°C EAS Avalanche Energy, Single Pulsed RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Quantity 3000 Rating Units 20 V ±12 V 12 A 7 150 °C -55 to 150 °C 34 A 3 W 0.86 --- mJ --- °C/W 100 °C/W 1 µç»°:0755-83387360 ÊÖ»ú£º13826508770£¨ÍõÏÈÉú£© ÓÊÏä: 3007605919@qq.com ÍøÖ●£ºwww.sztssd.com µØÖ●:ÉîÛÚÊи£ÌïÇøÖк½Â●¶¦³Ï¹ú¼ÊÄÏ×ù18Â¥1814 TS08N02S Single N-Channel Power MOSFETELECTRICAL CHARACTERISTICS
(TA=25°C Unless Otherwise Noted) Symbo l Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS(th) Gate threshold voltag...
