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TS1M3660 - PcRam

General Description

The TS1M3660 is a 1M by 36-bit dynamic RAM module with 2 pcs of 1Mx16 DRAMs and 1 pcs of 1Mx4 quad CAS DRAMs assembled on the printed circuit board.

The TS1M3660 is optimized for application to systems which require high density and large capacity along with compact sizing.

Key Features

  • 1,048,576-word by 36-bit organization. Fast Page Mode Operation. Single +5.0V ± 10% power supply. 512 cycles refresh. Lower power consumption. CAS before RAS refresh, RAS only refresh, Hidden refresh, Fast Page Mode, Read_Modify_Write capability. Placement TS1M3660 Access time from /RAS tRAC Access time from /CAS tCAC Random read/write cycle time tRC Page mode cycle time tPC A B C www. DataSheet4U. com 60ns 15ns 110ns 40ns Dimensions.

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Datasheet Details

Part number TS1M3660
Manufacturer Unknown Manufacturer
File Size 162.99 KB
Description PcRam
Datasheet download datasheet TS1M3660 Datasheet

Full PDF Text Transcription for TS1M3660 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TS1M3660. For precise diagrams, and layout, please refer to the original PDF.

PcRam Description The TS1M3660 is a 1M by 36-bit dynamic RAM module with 2 pcs of 1Mx16 DRAMs and 1 pcs of 1Mx4 quad CAS DRAMs assembled on the printed circuit board. The...

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pcs of 1Mx4 quad CAS DRAMs assembled on the printed circuit board. The TS1M3660 is optimized for application to systems which require high density and large capacity along with compact sizing. TS1M3660 Features • • • • • • 1,048,576-word by 36-bit organization. Fast Page Mode Operation. Single +5.0V ± 10% power supply. 512 cycles refresh. Lower power consumption. CAS before RAS refresh, RAS only refresh, Hidden refresh, Fast Page Mode, Read_Modify_Write capability. Placement TS1M3660 Access time from /RAS tRAC Access time from /CAS tCAC Random read/write cycle time tRC Page mode cycle time tPC A B C www.DataSheet4U.com 60n