Datasheet Summary
Dual N-Channel Power MOSFET
VDSS（V） 30
RDS (ON)
15mΩ(Typ)@VGS=10V 21mΩ(Typ)@VGS=4.5V
ID(A)
Pin Description
FEATURE:
- The TS20DN03is the high cell density trenched
Dual N-ch MOSFETS, which provides excellent
RDSON and efficiency for most of the small power switching and load switch applications.
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench
ú technology
PDFN3X3-8L
´ Ordering and Marking Information
Product ID
Marking
Package
Packaging
± TS20DN03
PDFN3X3-8L
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