Unknown Manufacturer TS20DN03
The TS20DN03is the high cell density trenched Dual N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.| Part No. | TS20DN03 |
|---|---|
| Datasheet | TS20DN03 Download |
| Manufacturer | Unknown Manufacturer |
| Description | Dual N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURE:●
● Green Device Available
● Super Low Gate Charge
● Excellent CdV/dt effect decline
● Advanced high cell density Trench ú technology PDFN3X3-8L ´ Ordering and Marking Information Product ID Marking Package Packaging ± TS20DN03 PDFN3X3-8L Tape&Reel
ABSOLUTE MAXIMUM RATINGS
Ê Symbol VDSS VGSS ¢ ID TJ Ê TSTG ͨIDM Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) Maximum Junction Temperature Storage Temperature Range Pulsed Drain Current Tc=25°C Tc=70°C Tc=25°C Quantity 5000 Rating Units 30 V ±20 V 20 A 10 150 °C -55 to 150 °C 56 A 6 PD Maximum Power Dissipation W TA=75°C --- EAS Avalanche Energy, Single Pulsed 12.1 mJ RθJC Thermal Resistance-Junction to Case --- °C/W RθJA Thermal Resistance-Junction to Ambient 75 °C/W 1 µç»°:0755-83387360 ÊÖ»ú£º13826508770£¨ÍõÏÈÉú£© ÓÊÏä: 3007605919@qq.com ÍøÖ●£ºwww.sztssd.com µØÖ●:ÉîÛÚÊи£ÌïÇøÖк½Â●¶¦³Ï¹ú¼ÊÄÏ×ù18Â¥1814ÊÒ TS20DN03 Dual N-Channel Power MOSFETELECTRICAL CHARACTERISTICS
(TA=25°C Unless Otherwise Noted) Symbol Parameter Static Characteristics Conditions Min.
