TS20DN03 - Dual N-Channel Power MOSFET

General Description

FEATURE:

switching and load switch applications.

Green Device Available Super Low Gate Charge Excellent CdV/dt effec

TS20DN03 dual n-channel power mosfet by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	TS20DN03
Manufacturer	Unknown Manufacturer
File Size	280.76 KB
Description	Dual N-Channel Power MOSFET
Datasheet	TS20DN03 Datasheet

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Full PDF Text Transcription (Reference)

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TS20DN03 Dual N-Channel Power MOSFET VDSS（V） 30 RDS (ON) 15mΩ(Typ)@VGS=10V 21mΩ(Typ)@VGS=4.5V ID(A) 20 Pin Description FEATURE: • The TS20DN03is the high cell density trenched Dual N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. • Green Device Available • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench ú technology PDFN3X3-8L ´ Ordering and Marking Information Product ID Marking Package Packaging ± TS20DN03 PDFN3X3-8L Tape&Reel Absolute Maximum Ratings Ê Symbol VDSS VGSS ¢ ID TJ Ê TSTG Í¨IDM Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.