U2G4460-50F2 - GaN high electron mobility transistor

General Description

C1210X475K016T C5750X5R1H106K CL005X7R1H472K101BB DLC75D820JW251XT DLC75D3R9BW251XT DLC75D3R6BW251XT RTT05100JTP U2G4460-50F2 Rogers 4350B Value 4.7uF 100V 1210 10uF 100V 2220 4.7nF 250V 1206 82pF 250V 0805 3.9pF 250V 0805 3.6pF 250V 0805 10Ω-0805 50W 20mil Vendor PSA TDK TDK Deli-cap Deli-cap Del

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U2G4460-50F2 gan high electron mobility transistor by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	U2G4460-50F2
Manufacturer	Unknown Manufacturer
File Size	495.93 KB
Description	GaN high electron mobility transistor
Datasheet	U2G4460-50F2 Datasheet

Full PDF Text Transcription for U2G4460-50F2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for U2G4460-50F2. For precise diagrams, and layout, please refer to the original PDF.

Production U2G4460-50F2 50W，4.4~6GHz， U2G4460-50F2 50W 4.4~6GHz 。、。， 28V 。 5.8GHz Demo board 1： Ø : 60W Ø : 61.7% 1: 5.7～5.9GHz， VDD=28V, IDQ=400mA。 : ， 2 （360º ）3 VDSS ...

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60W Ø : 61.7% 1: 5.7～5.9GHz， VDD=28V, IDQ=400mA。 : ， 2 （360º ）3 VDSS VDD VGS IGMAX TSTG Tj TMAX Rθjc TC VSWR-T 150 55 -10 ~ +2 10.6 -65 ~ +150 225 275 2.6 -40 ~ +85 10:1, 50W 2：，：PDISS=36.2W， 85℃。 3：， 100us， 10%。 V V V mA ℃ ℃ ℃ ℃/W ℃ ／ Production VGS -5V VDS VGS， IDQ VDS VGS (TC=25℃， ) (VGS = -10 V, ID = 10.6 mA) (VDS = 28 V, ID = 10.6 mA) (VDD = 28 V, IDQ = 400 mA,) , 4 V(BR)DSS VGS(th) VGS(Q) Freq. (GHz) ZSOURCE (Ω) 5.9 9.2 – j2.5 , 4 ZLOAD(Ω) 4.3 – j8.9 Freq. (GHz) 5.9 ZSOURCE (Ω) 9.2 – j2.5 ZLOAD(Ω) 3.3 – j6.8 150 -4 - Gain (dB) 13.5 Gain (dB) 14.6 -2.8 -2.6 Psat (dBm) 48.7 Psat (dBm) 48.0 -1.

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