VTS85
DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications. ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40°C to 150°C -40°C to 105°C Operating Temperature: -40°C to 125°C -40°C to 105°C Reverse Voltage: Series 20, 31 Series 30
DIMENSIONS
VTS_ _80, 82, 85
PACKAGE DIMENSIONS inch (mm)
CASE 44A ANODE (ACTIVE) SURFACE SHOWN CATHODE IS BACKSIDE
VTS__80 .800 (20.32) .800 (20.32) .6072 (3922) VTS__82 .400 (10.16) .400 (0.16) .144 2 (932) VTS__85 .200 (5.08) .200 (5.08) .032 2 (212)
Series 20, 31 Series 30
6.0 Volts
ACTIVE...
