XL1225
DESCRIPTION
The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications.
ABSOLUTE MAXIMUM RATING
Parameter
Part No. Symbol Min. Max
Repetitive Peak
XL 1225 VDRM 400
Off State Voltage ML 1225 VDRM 300
On-State Current
IT(RMS) 0.5
Average On-State Current
IT (AV) 0.5
Peak Reverse Gate Voltage Peak Gate Current
Gate Dissipation Operating Temperature
Storage Temperature
VGRM
IGM PG (AV)
Tj
1 0.1 -40 125
Tstg -40 125
Unit Test Conditions V Tj=40℃ to V 125℃ (RGK=1K) A TC=40℃ A Half Cycle=180℃, TC=40℃
V IGR=10µA
A 10µs max. W 20 ms max. ℃
℃
PIN ASSIGNMENT (TO-92 PACKAGE)
K : Cathode G : Gate A : Anode
ELECTRICAL CHARACTERISTICS ( TA=25℃)
Parameter
Symbol Min. Max Unit Test Conditions
Off-State Leakage Current
IDRM
0.1 m A @VDRM (RGK=1K)Tj=125℃
Off-State Leakage
IDRM
1.0 µA @VDRM...
