ZTX556
ZTX556 is PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS manufactured by Unknown Manufacturer.
FEATURES
- 300 Volt VCEO
- 0.5 Amp continuous current
- Ptot= 1 Watt
ZTX556 ZTX557
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX556 -200 -200 -5 -1 -0.5 1.0
E-Line TO92 patible ZTX557 -300 -300 UNIT V V V A A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) h FE f T 50 50 75 ZTX556 ZTX557 UNIT CONDITIONS. IC=-100µ A IC=-10m A- IE=-100µ A VCB=-160V VCB=-200V VEB=-4V IC=-50m A, IB=-5m A- IC=-50m A, IB=-5m A- IC=-50m A, VCE=-10V- IC=-10m A, VCE=-10V- IC=-50m A, VCE=-10V- MHz IC=-50m A, VCE=-10V f=100MHz MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency -200 -200 -5 -0.1 -0.1 -0.3 -1 -1 300 50 50 75 MAX MIN. -300 -300 -5 -0.1 -0.1 -0.3 -1 -1 300 MAX V V V
µA µA µA
3-200
ZTX556 ZTX557
TYPICAL CHARACTERISTICS tf ts µs µs
-0.8
IB1=IB2=IC/10 tr µs 2.0
16 14
VCE(sat)
- (Volts)
IC/IB=10 -0.6
12 10 ts tf tr
-0.4
Switching time
8 6
1.0 td ns 100
-0.2
4 2 td
0.5 50 0 -0.1 0
-0.0001
-0.001
-0.01...
