• Part: RB551V-30
  • Description: SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
  • Category: Diode
  • Manufacturer: EVVO
  • Size: 859.89 KB
Download RB551V-30 Datasheet PDF
EVVO
RB551V-30
RB551V-30 is SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE manufactured by EVVO.
Features - Small surface mounting type - Ultra low VF - High reliability - Applications - High frequency rectification switching regulation - Marking Marking 1.Cathode 2.Anode - Simplified outline(SOD-323) Top View - Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range - Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 m A at IF = 500 m A Reverse Current at VR = 20 V Symbol Value Unit IFSM Tj Ts - 40 to + 125 Symbol Max. Unit µA Note: ESD sensitive product handling required. - SOD-323 A...