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ECF10N20
HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs
T03
8.70 1.50
11.60 +0.3
25.00 10.90 + 0.1
3
39.00 R 2.00 max 01.0
30.2 + 0.15 16.90 + 0.15
21
MECHANICAL DATA
R4.00 + 0.1
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSX Drain – Source Voltage VGSS Gate – Source Voltage
ID ID(PK)
Continuous Drain Current Body Drain Diode
PD Total Power Dissipation @ (T case = 25°C) C Tstg Storage Temperature Range
Tj R0JC
Maximum Operating Junction Temperature Thermal Resistance Junction - case
1. GATE 2. DRAIN 3 SOURCE
dimensions in mm
(ECF10)20
200V +- 14V 8A 8A 125W -55 to 150°C 150°C 1.0°C/W
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